inchange semiconductor isc product specification isc silicon npn power transistors BUW40/a/b isc website www.iscsemi.cn description collector-emitter sustaining voltage- : v ceo(sus) = 300v(min)- BUW40 = 350v(min)- BUW40a = 400v(min)- BUW40b high switching speed high power dissipation applications designed for high voltage and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit BUW40 450 BUW40a 550 v cev collector-emitter voltage v be = -1.5v BUW40b 650 v BUW40 300 BUW40a 350 v ceo(sus) collector-emitter voltage BUW40b 400 v v ebo emitter-base voltage 6 v i c collector current-continuous 1 a i cm collector current-peak 2 a p c collector power dissipation@t c =25 40 w t j junction temperature 150 t stg storage temperature -65~150 www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon npn power transistors BUW40/a/b electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BUW40 300 BUW40a 350 v ceo(sus) collector-emitter sustaining voltage BUW40b i c = 200ma ; i b = 0 400 v v (br)ebo emitter-base breakdown voltage i e = 1ma ; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.2a b i c = 1a; i b = 0.2a,t b c = 150 1.0 2.0 v v be (on) base-emitter on voltage i c = 1a ; v ce = 3v 1.5 v BUW40 v ce = 450v;v be = -1.5v v ce = 450v;v be = -1.5v,t c = 150 0.1 1.0 BUW40a v ce = 550v;v be = -1.5v v ce = 550v;v be = -1.5v,t c = 150 0.1 1.0 i cev collector cutoff current BUW40b v ce = 650v;v be = -1.5v v ce = 650v;v be = -1.5v,t c = 150 0.1 1.0 ma i ebo emitter cutoff current v eb = 6v; i c =0 1.0 ma h fe dc current gain i c = 1a ; v ce = 3v 10 50 f t current-gain?bandwidth product i c = 0.5a ;v ce = 10v 10 mhz isc website www.iscsemi.cn 2 www.datasheet.co.kr datasheet pdf - http://www..net/
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